Investigation of KOH Anisotropic Etching for the Fabrication of Sharp Tips in Silicon-on-Insulator (SOI) Material
Wet Etching and Bulk Micromachining Fundamentals of Micromachining Dr. Bruce K. Gale Key Technologies of Wet Etching
![The fabricated silicon membrane. KOH etching wall produces 54.7 o angle... | Download Scientific Diagram The fabricated silicon membrane. KOH etching wall produces 54.7 o angle... | Download Scientific Diagram](https://www.researchgate.net/publication/236605280/figure/fig4/AS:299332642328595@1448377871425/The-fabricated-silicon-membrane-KOH-etching-wall-produces-547-o-angle-from-horizontal.png)
The fabricated silicon membrane. KOH etching wall produces 54.7 o angle... | Download Scientific Diagram
![Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS | Micro and Nano Systems Letters | Full Text Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS | Micro and Nano Systems Letters | Full Text](https://media.springernature.com/lw685/springer-static/image/art%3A10.1186%2Fs40486-017-0057-7/MediaObjects/40486_2017_57_Fig7_HTML.gif)
Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS | Micro and Nano Systems Letters | Full Text
![Unprotected sidewalls of implantable silicon-based neural probes and conformal coating as a solution | npj Materials Degradation Unprotected sidewalls of implantable silicon-based neural probes and conformal coating as a solution | npj Materials Degradation](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fs41529-021-00154-9/MediaObjects/41529_2021_154_Fig1_HTML.png)
Unprotected sidewalls of implantable silicon-based neural probes and conformal coating as a solution | npj Materials Degradation
![Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells - ScienceDirect Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0169433212018582-gr1.jpg)
Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells - ScienceDirect
![Facile and low‐cost fabrication of uniform silicon micro/nanostructures by nanopitting‐assisted wet chemical etching - Wang - 2018 - Micro & Nano Letters - Wiley Online Library Facile and low‐cost fabrication of uniform silicon micro/nanostructures by nanopitting‐assisted wet chemical etching - Wang - 2018 - Micro & Nano Letters - Wiley Online Library](https://ietresearch.onlinelibrary.wiley.com/cms/asset/bf112842-639c-4ab8-a782-fe20daf35483/mna2bf01308-fig-0001-m.jpg)
Facile and low‐cost fabrication of uniform silicon micro/nanostructures by nanopitting‐assisted wet chemical etching - Wang - 2018 - Micro & Nano Letters - Wiley Online Library
![Systematic study of the etching characteristics of Si{111} in modified TMAH - Swarnalatha - 2020 - Micro & Nano Letters - Wiley Online Library Systematic study of the etching characteristics of Si{111} in modified TMAH - Swarnalatha - 2020 - Micro & Nano Letters - Wiley Online Library](https://ietresearch.onlinelibrary.wiley.com/cms/asset/0daae5aa-d00e-4724-bca9-58194d563aaf/mna2bf01718-fig-0001-m.jpg)
Systematic study of the etching characteristics of Si{111} in modified TMAH - Swarnalatha - 2020 - Micro & Nano Letters - Wiley Online Library
![Can someone explain why the anisotropic KOH etch of silicon only ever etches *inward* from the edges of the exposed area of the mask? | ResearchGate Can someone explain why the anisotropic KOH etch of silicon only ever etches *inward* from the edges of the exposed area of the mask? | ResearchGate](https://www.researchgate.net/profile/Daniel-Lewis-12/post/Can_someone_explain_why_the_anisotropic_KOH_etch_of_silicon_only_ever_etches_inward_from_the_edges_of_the_exposed_area_of_the_mask/attachment/5ba277873843b006753a2387/AS%3A672609826009094%401537374087657/download/KOH+etching+Si.png)
Can someone explain why the anisotropic KOH etch of silicon only ever etches *inward* from the edges of the exposed area of the mask? | ResearchGate
![A New Model for the Etching Characteristics of Corners Formed by Si<sub>{111}</sub> Planes on Si<sub>{110}</sub> Wafer Surface A New Model for the Etching Characteristics of Corners Formed by Si<sub>{111}</sub> Planes on Si<sub>{110}</sub> Wafer Surface](https://www.scirp.org/html/1-8102002/b96e2d75-902b-4778-b7fa-742c5a2af243.jpg)